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| SI7456DP Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) 0.025 @ VGS = 10 V 0.028 @ VGS = 6.0 V ID (A) 9.3 8.8 D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching D 100% Rg Tested APPLICATIONS D Primary Side Switch for High Density DC/DC D Telecom/Server 48-V, Full-/Half-Bridge DC/DC D Industrial and 42-V Automotive PowerPAK SO-8 D 6.15 mm S 1 2 S 3 S 4 D 8 7 D 6 D 5 D G 5.15 mm G S N-Channel MOSFET Bottom View Ordering Information: SI7456DP-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Avalanche Current Single Avalanche Energy (Duty Cycle v1%) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C L = 0 1 mH 0.1 TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IAS EAS IS PD TJ, Tstg 10 secs 100 "20 9.3 6.7 40 30 45 4.3 5.2 2.7 Steady State Unit V 5.7 4.1 A mJ 1.6 1.9 1.0 A W _C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71603 S-31989--Rev. D, 13-Oct-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 19 52 1.5 Maximum 24 65 1.8 Unit _C/W C/W 1 SI7456DP Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 100 V, VGS = 0 V VDS = 100 V, VGS = 0 V, TJ = 85_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 9.3 A VGS = 6.0 V, ID = 8.8 A VDS = 15 V, ID = 9.3 A IS = 4.3 A, VGS = 0 V 40 0.021 0.023 35 0.8 1.2 0.025 0.028 2 "100 1 20 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 4.3 A, di/dt = 100 A/ms VDD = 50 V, RL = 50 W ID ^ 1 A, VGEN = 10 V, RG = 6 W 0.5 VDS = 50 V, VGS = 10 V, ID = 9.3 A 36 10 8.6 1.27 20 10 46 26 50 2.1 40 20 90 50 80 ns W 44 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 VGS = 10 thru 6 V 32 I D - Drain Current (A) I D - Drain Current (A) 5V 32 40 Transfer Characteristics 24 24 16 16 TC = 125_C 8 25_C - 55_C 0 8 4V 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Document Number: 71603 S-31989--Rev. D, 13-Oct-03 www.vishay.com 2 SI7456DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.04 r DS(on) - On-Resistance ( W ) 3500 3000 0.03 VGS = 6.0 V 0.02 C - Capacitance (pF) 2500 2000 1500 1000 500 0.00 0 8 16 24 32 40 0 0 10 20 30 40 50 60 Crss Coss Capacitance Ciss VGS = 10 V 0.01 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 50 V ID = 9.3 A 8 2.6 2.3 2.0 1.7 1.4 1.1 0.8 0 0 6 12 18 24 30 36 Qg - Total Gate Charge (nC) 0.5 - 50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 9.3 A 6 4 2 r DS(on) - On-Resistance (W) (Normalized) - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 40 0.08 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) I S - Source Current (A) TJ = 150_C 10 0.06 ID = 9.3 A 0.04 TJ = 25_C 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71603 S-31989--Rev. D, 13-Oct-03 www.vishay.com 3 SI7456DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.5 50 Single Pulse Power 40 0.0 V GS(th) Variance (V) ID = 250 mA Power (W) 30 - 0.5 20 - 1.0 10 - 1.5 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 10 100 600 TJ - Temperature (_C) Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 52_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse 0.05 0.01 0.0001 0.001 0.01 Square Wave Pulse Duration (sec) 0.1 1 www.vishay.com 4 Document Number: 71603 S-31989--Rev. D, 13-Oct-03 |
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